Non-volatile memory circuit using ferroelectric capacitor storage element

ABSTRACT

A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation of U.S. patent application Ser. No. 07/440,434,filed Nov. 20, 1989, now abandoned which is a continuation of U.S.patent application Ser. No. 07/057,100, filed Jun. 2, 1987 nowabandoned.

TECHNICAL FIELD

The present invention pertains in general to integrated circuit memoriesand in particular to such memories having non-volatile storage.

BACKGROUND OF THE INVENTION

Integrated circuit memories have come into extensive use in manyapplications, particularly for computer systems. It has been apronounced technological trend to increase the capacity and density ofsuch memories. As manufacturing and design techniques have improved, thecost of memory circuits has decreased dramatically, and this has greatlyexpanded the number of applications and the size of the market. However,the low cost, large capacity integrated circuits now in use havevolatile memory storage, that is, the data stored in these memories islost when the power is removed. There are many applications that couldbe enhanced if low cost memories could be made which are non-volatile.In certain applications, it is essential that the data be retained inthe memory when power is removed. To fill this market, there have beendeveloped a number of types of non-volatile memories. Among the mostcommon of these now in use is the electronically programmable read onlymemory (EPROM). However, the non-volatile memories now availabletypically have a rather low density of memory storage, are generallycomplex to manufacture, often have a limited lifetime and are much moreexpensive than volatile memories. The need for non-volatile memorystorage in integrated circuits has long been recognized, but a low costsolution has not yet been found.

The phenomenon of ferroelectric materials has been recognized andstudied for many years. Such materials have multiple orientation stateswhich can be selected by the application of an electric field. Theparticular orientation state which is set in a ferroelectric materialcan be used to represent a data state. This orientation state isretained even when no further power is applied to the material. It isthus possible to store a particular state in a non-powered device andthen to read the data state at a later time. It has long been recognizedthat ferroelectric materials could serve as a memory element in anelectrical circuit. An early recognition of this application is shown inU.S. Pat. No. 2,695,396 to Anderson. Since the Anderson patent, therehave been more disclosures of circuitry which utilize ferroelectricelements from memory storage. Such patents include U.S. Pat. No.4,144,591 to Brody, U.S. Pat. No. 4,149,301 to Cook and U.S. Pat. No.4,360,896 to Brody. Still other patents report circuits which useferroelectric materials in a memory. But, despite the numerousreferences to reports of ferroelectric memory devices, there has to datebeen no known device of this type which has been introduced into thecommercial market. The demand for non-volatile memories is wellrecognized and the apparent applicability of ferroelectric materials andthe fabrication of such devices have been reported. But, numerousproblems have been experienced in both the manufacture and design ofpractical ferroelectric devices.

The present invention sets forth a circuit design for a ferroelectricmemory which takes advantage of the non-volatile characteristics of suchmemory elements, while providing fast, reliable writing and reading ofdata for such circuits.

SUMMARY OF THE INVENTION

A selected embodiment of the present invention comprises a non-volatilememory circuit which includes a ferroelectric capacitor whichselectively stores first and second polarization states therein. Anaccess transistor provides a series connection to the ferroelectriccapacitor upon receipt of a selection signal for the memory circuit.Circuitry is provided which includes drive lines and bit lines connectedthrough the access transistor to the terminals of the capacitor. Theaccess transistor is turned on to establish a series connection of thecapacitor and transistor between the drive and bit lines. The circuitryapplies a first voltage state and a second, opposite polarity, voltagestate to the ferroelectric capacitor for producing respectively thefirst and second polarization states in the ferroelectric capacitor.This is a write function for the memory circuit. The circuitry furtherapplies a pulse to the drive line for producing a data signal at the bitline corresponding to the polarization state stored in the ferroelectriccapacitor, thereby providing a read function for the memory circuit.

A further embodiment of the present invention is a method for writing agiven data state into a non-volatile memory cell through a series ofsteps. The first step comprises selecting a memory cell by activating anaccess transistor to connect a ferroelectric capacitor between a driveline and a bit line. A drive signal having a predetermined voltage stateis applied through the drive line to a first terminal of theferroelectric capacitor. Concurrently, a data signal having one of aplurality of voltage states is applied through the bit line to a secondterminal of the ferroelectric capacitor, wherein the difference betweenthe drive signal voltage and the data signal voltage applies a givenpolarization state to the ferroelectric capacitor, whereby thepolarization state is stored in the capacitor and corresponds to thegiven data state. Lastly, the access transistor is deactivated toisolate the ferroelectric capacitor.

A still further embodiment of the present invention is a method forreading a stored data state from a ferroelectric capacitor memorycircuit. An access transistor connects the ferroelectric capacitorserially between a drive line and a bit line. A drive pulse is appliedthrough the drive line to the ferroelectric capacitor to apply apredetermined electric field across the ferroelectric capacitor. Thequantity of charge transferred to the bit line depends upon thepolarization state previously set in the ferroelectric capacitor. Thevoltage charge on the bit line is compared to a reference voltage or toa differential charge from a second ferroelectric capacitor to produce adata state which corresponds to the stored polarization state.

A still further aspect of the present invention is that during a readoperation, which is destructive, the original polarization state isrestored without the need for a subsequent write operation to the memorycell.

DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and theadvantages thereof, reference is now made to the following DetailedDescription taken in conjunction with the following Drawings in which:

FIG. 1 is a hysteresis curve illustrating the polarizationcharacteristics of a ferroelectric capacitor,

FIG. 2 is a single cell ferroelectric capacitor memory circuit inaccordance with the present invention,

FIG. 3 is a set of waveforms illustrating the reading of data states forthe memory circuit shown in FIG. 2,

FIG. 4 is a memory system which includes a single cell ferroelectriccapacitor memory circuit, together with the peripheral circuits requiredto write data into the memory cell and read data from the memory cell,

FIG. 5 is a set of waveforms illustrating the writing of data 1 and data0 states into the memory system shown in FIG. 4,

FIG. 6 is a set of waveforms illustrating the reading of a data 1 fromthe memory system shown in FIG. 4,

FIG. 7 is a set of waveforms illustrating the reading of a data 0 statefrom the memory system shown in FIG. 4,

FIG. 8 is a non-volatile memory circuit having a double memory cell inaccordance with the present invention,

FIG. 9 is a memory system utilizing the double memory cell circuit shownin FIG. 8,

FIG. 10 is a set of waveforms illustrating the writing of data 1 anddata 0 states into the memory system shown in FIG. 9,

FIG. 11 is a set of waveforms illustrating the reading of a data 1 statefrom the memory system shown in FIG. 9,

FIG. 12 is a set of waveforms illustrating the reading of a data 0 statefrom the memory system shown in FIG. 9,

FIG. 13 is an illustration of the sense amplifier shown in FIGS. 4 and 9together with bit-line equalization circuitry, isolation circuitry andcolumn address circuitry,

FIG. 14 is a set of waveforms illustrating the operation of the senseamplifier shown in FIG. 13 for reading a data 1 state,

FIG. 15 is a set of waveforms illustrating the operation of the senseamplifier shown in FIG. 13 for writing a data 1 state into a memorycell,

FIG. 16 is a set of waveforms illustrating the operation of the memorysystem shown in FIG. 9 and the sense amplifier shown in FIG. 13 toperform a read/modify/write cycle, and

FIG. 17 is an alternate configuration for the circuit shown in FIG. 2.

DETAILED DESCRIPTION OF THE INVENTION

The present invention utilizes a ferroelectric capacitor as anon-volatile storage element in an electronic memory. It has been wellestablished that ferroelectric capacitors can be set to have first andsecond opposite polarization states. Such operation with a ferroelectriccapacitor is shown in U.S. Pat. Nos. 2,695,396, 3,155,833 and 4,360,896.It has been found that a ferroelectric ceramic material having adesignation PLZT is suitable for use in accordance with the presentinvention. PLZT is a perovskite crystal made up of lead, lanthanum,zirconium and titanium. This ferroelectric material can be produced asdescribed in U.S. Pat. No. 4,946,710 entitled Method for Preparing PLZTand PZT Sol-Gels and Fabricating Ferroelectric Thin Films. A furtherdescription of ferroelectric materials is in “Sol-Gel Processing ofPbTiO₃, PbZrO₃, PZT, PLZT Thin Films”, Brit. Cer. Proc., Vol. 36, 1985pages 107-121 and “Preparation of Ferroelectric PZT Films by ThermalDecomposition of Organometallic Compounds”, Journal of MaterialsScience, Vol. 19, 1984, pages 595-598.

Referring now to FIG. 1 there is illustrated a hysteresis curve showingthe polarization versus electric field for a ferroelectric capacitor.When a positive electric field is applied across the terminals of aferroelectric capacitor, there is produced the polarization stateindicated as Ps. As the electric field intensity decreases toward 0, thepolarization is shown by the upper right side curve. When the electricfield intensity decreases to 0, the polarization state is designated asP(0). This polarization state is arbitrarily defined to be a data 0.When the electric field intensity goes negative, the polarization of thecapacitor is shown by the curve which extends through the upper left andlower left quadrants. As the negative electric field returns to 0, thehysteresis of the capacitor produces a polarization state P(1), which isnegative polarization. This is arbitrarily defined to be a data 1 state.When a positive electric field is again applied to the terminals of theferroelectric capacitor, the polarization is indicated by the curveextending through the lower right and upper right quadrants until thepolarization state Ps is again reached. It can be seen that withalternating positive and negative polarity electric fields that thepolarization will be indicated by traveling counterclockwise around thehysteresis curve as indicated by the arrows on the curve.

The polarization between the P(0) and P(1) points is termed remanentbecause it remains after the electric field is removed. The polarizationbetween the Ps and P(0) points is termed non-remanent since it is lostwhen the electric field goes from a maximum to zero.

A memory cell circuit representative of the present invention isillustrated in FIG. 2. A memory circuit 20 includes a ferroelectriccapacitor 22 and an access transistor 24. The ferroelectric capacitor 22can be set to have a data 1 polarization state as indicated by thedownward pointing arrow, which indicates a negative polarization state.It can further be set to have a data 0 state, which is indicated by theupward pointing arrow. Access transistor 24 is an MOS enhancement modedevice which has the drain terminal thereof connected to one terminal ofthe ferroelectric capacitor 22. A second terminal of the capacitor 22 isconnected to a drive line 26. The gate terminal of transistor 24 isconnected to a word line 28 which receives a selection signal forselecting the memory circuit 20. The source terminal of transistor 24 isconnected to a bit line 30 which transmits data states to and receivesdata states from the ferroelectric capacitor 22.

The physical configuration shown in FIG. 2 for circuit 20 has the bitline 30 perpendicular to the drive line 26 and the word line 28.Although the word line 28 is typically orthogonal to the bit line 30,the drive line 26 may be parallel to either of the lines 28 or 30.Further, the positions of the transistor 24 and capacitor 22 can bereversed. An alternate configuration 20′ illustrating this reversal isshown in FIG. 17. The circuit in FIG. 17 is essentially the same as thatshown in FIG. 2, but with the bit and drive lines interchanged and theword line made perpendicular.

The read operation for the circuit 22 is illustrated by the waveformsshown in FIG. 3. When the signal on the word line 28 is in a high state,the transistor 24 is turned on, thereby serially connecting theferroelectric capacitor 22 between the drive line 26 and the bit line30. After the word line has turned on the transistor 24, the drive linegoes from 0 to a positive voltage state. When the capacitor 22 haspreviously been set to have a negative polarization state, data 1, therising voltage on the drive line applies an electric field across thecapacitor 22. Referring back to FIG. 1, this is a movement along thehysteresis curve from the point P(1) upward and to the right until thepolarization of the capacitor is Ps. When the drive line voltage falls,the polarization follows the upper curve back to the point P(0). Thereis thus a net shift of current through the transistor 24 to the bit line30. The bit line 30, in a typical integrated circuit configuration, hasan inherent capacitance which is charged by the current flow through thecapacitor 22. In an application where the bit line 30 has insufficientcapacitance, a capacitor can be connected to it. Further referring toFIG. 3, it can be seen that when the ferroelectric capacitor is in theP(1) state initially and a positive going pulse is applied through thedrive line 26 that there will be a net voltage remaining on the bit line30 after the drive line pulse has returned to 0.

As a comparative reference, the P(1) polarization state is shown as adotted line for each of the bit line waveforms.

When the ferroelectric capacitor 22 is in the P(0) state representing adata 0, and the positive drive pulse is applied, the polarizationindicated in the hysteresis curve in FIG. 1 transitions from the P(0)point upward to the right until the polarization is at the Ps point.When the drive line voltage falls, the polarization returns to P(0).There is no net change in polarization and therefore no current flowthrough the transistor 24. As a result, there is no charge transferredinto the bit line 30. The temporary charging of the bit line 30 is dueto the non-remanent polarization.

For convenience, the data 1 state has been defined to be a high levelstate following activation of the ferroelectric capacitor. Thiscorresponds to the charge transferred to the bit line when the capacitorhas been read. Likewise, the data 0 state corresponds to a low or zerovoltage state after the capacitor has been read.

The operation of a sense amplifier in conjunction with the circuit 20 isfurther described below. Still referring to FIG. 3, the sense amplifieris activated at a particular time to read the bit line. It can beactivated either during the time that the drive line 26 is active, asshown by the dotted line 35, or after the drive line pulse has returnedto o as indicated by the line 38. By activating the sense amplifier atthe time shown by line 35, during the period of the drive line pulse,the data in the memory cell is retrieved faster. However, by waitinguntil the drive line pulse has returned to zero, as indicated by line38, the data retrieval is slower but the long-term reliability of thememory cell 20 may be increased due to a reduced wear-out mechanisms.Such a residual voltage can tend to reduce the lifetime of ferroelectricmaterials.

A memory system 36, which utilizes the single cell memory circuit 20, isillustrated in FIG. 4. The memory system 36 employs the circuit 20 andall common elements are identified by similar reference numerals. Theaddress for a particular memory cell is received at an address terminal38. This can be a parallel input. The memory system 36 is enabled by achip enable signal shown by the symbol CE bar at a terminal 40. When thechip enable signal goes to a low state, the memory system 36 is enabled.The CE bar signal is also provided to the circuits 46 and 48. Aread/write (R/W) bar command is input to the memory system 36 at aterminal 42. An output enable signal, shown as OE bar at terminal 44,provides the function of enabling the output from the system 36, thatis, preparing the output to be read.

The address signal is input through terminal 38 to a drive line decoderand drivers circuit 46 and a word line decoder and drivers circuit 48.The circuit 46 generates the drive line signal at line 26, while thecircuit 48 generates the word line signal at line 28.

The chip enable bar signal is input through the terminal 40 to a sensetiming and control circuit 54 as well as to the circuits 46 and 48.Likewise, the read/write command signal at terminal 42 and the outputenable command at terminal 44 are input to a sense timing and controlcircuit 54. The output from the sense timing and control circuit 54, isinput to a sense amplifier 56, which also receives a reference voltageor reference cell input through a line 58. The sense amplifier 56detects voltage states on the bit line 30 for read operations andgenerates required data states on line 30 for write operations.

The read/write signal is further transmitted through terminal 42 to adata input/output and decoder circuit 60. The output enable signal atterminal 44 is also input to the circuit 60. A data input and outputterminal 62 is connected to the data input/output and decode circuit 60.Input data is transmitted through terminal 62 and output data from thememory cell 20 is received at terminal 62. The circuit 60 is connectedto transfer data to and from the sense amplifier 56 through a line 64.

The input to line 58 can also be from a “dummy cell.” This is a memorycell having the same architecture as other memory cells, such as cell20, on the same column line, but having a different capacitor size.Dummy cells are well known in the field of dynamic random access memorycircuits. The dummy cell is always maintained in the same state and isdriven each time a memory cell is accessed on the same column line. Theoutput of the dummy cell produces a reference having a level between thedata outputs generated by the data memory cell.

Operation of the memory system 36 is now described in reference to FIG.4 and to the waveforms shown in FIGS. 5, 6 and 7. The writing of a data1 and a data 0 is shown in reference to FIG. 5. There will first bedescribed the writing of a data 1 state into the memory circuit 20. Adata state 1 is applied to the input/output terminal 62, while anaddress that selects the memory circuit 20 is input through the terminal38. The memory system 36 is activated by a low input at the chip enableterminal 40. A write signal is input to the terminal 42. The circuit 48decodes the address and applies a word line signal to the line 28 toactivate the transistor 24. This occurs at the rising edge of the wordline signal. The circuit 46 generates a drive line pulse on the driveline 26. The sense amplifier 56 responds to the data 1 input bygenerating a high level pulse signal on the bit line 30. When thetransistor 24 is conductive, the ferroelectric capacitor 22 receives anet zero voltage when the drive line pulse is high. But when the driveline pulse goes to zero, the ferroelectric capacitor 22 receives anegative electric field (bit line 30 high and drive line 26 low) and istherefore oriented to have a negative polarization, which is indicatedas P(1) in FIG. 1. When the word line 28 drops to the low level, thetransistor 24 is turned off and the ferroelectric capacitor 22 isisolated. The capacitor 22 retains the P(1) polarization state.

The writing of a data 0 state is much like that for the data 1 statedescribed above. The only difference is that the sense amplifier 56holds the bit line at a low data state. The word line is activated inthe same manner. With a low state on the bit line 30 and a high state onthe drive line 26, the ferroelectric capacitor has its polarization setto the P(0) state, as indicated in FIG. 1. When the drive line pulsegoes low, there is no voltage across the capacitor 22. Further, as notedabove, the negative polarization state indicates a data 1, while apositive polarization state is used to indicate a data 0. This is anarbitrary definition that is used for convenience in reading the outputsfrom the memory circuit 20.

The reading of a data state which has previously been stored in thememory circuit 20 is now described in reference to FIG. 6. In reading amemory circuit there must be applied an address to the terminal 38 andthis address is decoded by the circuit 48 to produce the word linesignal at line 28. The chip enable signal is provided through line 40 toactivate the memory system 36. The read state of the read/write signalis input through the terminal 42. For this case, the data state to beread from the memory circuit 20 will be output to the input/outputterminal 62. Upon receipt of the chip enable command, a predeterminedvoltage pulse is generated by the circuit 46 and applied as the drivepulse to the drive line 26. This is a positive going pulse. For readinga data 1 state, which has the negative polarization, the drive linecauses a charge transfer through the transistor 24 to the bit line 30.This serves to charge the bit line 30 and increase the voltage thereonas indicated by the waveform for bit line 30 in FIG. 6. Even after thedrive line 26 returns to 0, there remains a net charge on the bit line30. This is a result of transitioning counterclockwise from the P(1)state to the P(0) state as shown in the hysteresis curve in FIG. 1. Atthe time indicated by a line 72, the sense amp 56 is activated. Thesense amp 56 has two inputs which are compared. The first input is thebit line 30 and the second input is a reference voltage which isreceived through line 58. If the bit line voltage exceeds the referencevoltage, then the sense amplifier 56 drives the bit line to a fullpositive voltage state. This is shown in FIG. 6 immediately followingthe line 72. Thus the P(1), negative polarization orientation produces adata 1, positive voltage state. The data state on the bit line 30 isthen passed through the line 64 to the output circuit 60 for supply tothe terminal 62. Thus, the complete cycle of applying an address to thememory system 36 is completed by receiving an output data state at theterminal 62.

The output data reaches a valid state as indicated by line 75.

A further important aspect of the present invention is the restoreaspect. As can be seen in FIG. 6, the sense amplifier drives the bitline 30 back to the full positive power state. Since the transistor 24is turned on because word line 28 is high, and the drive line 26 hasreturned to the low voltage state, the negative polarization state P(1)is reapplied to the ferroelectric capacitor 22. The sense amplifier thenpulls the bit line to 0 thereby reducing the electric field across thecapacitor 22 to zero. The word line 22 then returns to 0, therebydeactivating the transistor 24 and isolating the capacitor 22. As aresult of this operation and timing, the ferroelectric capacitor 22 isdestructively read, but immediately restored to the original state. Thisprocess of immediate restoration provides a considerable time savingover previous destructive reading techniques which take the output dataand perform a complete write cycle to restore the original state in thememory cell. The process of the present invention in providing immediaterestoration of the data state to the ferroelectric capacitorsignificantly increases the speed of the memory system 36 and its dataavailability, as compared to previous non-volatile memory circuits.

The operation of reading a data 0 for the memory system 36 shown in FIG.4 is illustrated by the waveforms shown in FIG. 7. The addressing,enabling and read\write inputs to the system 36 are the same asdescribed above in reference to FIG. 6. When the word line 28 goes tothe high state, the transistor 24 is activated, thereby connecting theferroelectric capacitor 22 serially between the drive line 26 and bitline 30. The circuit 46 likewise produces a fixed positive drive pulseon the drive line 26. In this instance the ferroelectric capacitor haspreviously been set to the P(0) polarization state. The application of apositive field to the ferroelectric capacitor 22 results in only movingthe polarization state from P(0) up to Ps and then back to P(0) as shownin the hysteresis curve in FIG. 1. As a result, there is little or nonet current transfer through the transistor 24 to the bit line 30, whichreturns to a low voltage state following the drive pulse. The senseamplifier 56 is activated at a time indicated by a line 74 to make acomparison between the voltage on the bit line 30 and the referencevoltage received through line 58. In this case the voltage on the bitline 30 is less than the reference voltage, therefore, the senseamplifier drives the bit line 30 to the low voltage state following thedrive pulse. This voltage state is then passed through the line 64 tothe circuit 60 and applied to the input/output terminal 62. Note that inthe case for reading a data 0, there is no change in the polarizationstate on the ferroelectric capacitor 22. Thus, the reading of a data 0state does not destroy the data state in the capacitor 22. Therefore,there is no need for any type of restore operation or subsequent writecycle.

For the operations of reading both a data 1 state and a data 0 state,the present invention eliminates any need for a separate datarestoration step, which is the conventional process used in memorysystems having destructive reads. The process of providing automaticrestoration is a substantial advantage for the circuit of the presentinvention.

A further aspect of the present invention is a double element memorycircuit 80 shown in FIG. 8. The circuit 80 uses two ferroelectriccapacitors for the storage of a single data state. This effectivelydoubles the signal-to-noise ratio for the memory circuit which in turnincreases its reliability and decreases its susceptibility to noise andother interference. It has further been found that certain ferroelectriccapacitor substances have a hysteresis characteristic, at least duringthe early lifetime. When compared to a fixed reference, as with thecircuit 20 shown in FIG. 2, the hysteresis characteristic can changesufficiently to reduce the signal-to-noise ratio to an unacceptablelevel. The circuit 80 provides identical ferroelectric capacitors whichhave the same hysteresis characteristics. The two capacitors are alsosubjected to the same number of pulse cycles. By reading these twocapacitors differentially, the time changing of characteristics can beminimized, while the increased voltage differential enhances thereliability of the memory circuit. The circuit 80 has a drive line 82, aword line 84, a bit line 86 and hit bar line 88. The lines 86 and 88have complementary voltage states. There is further included a datainput/output line 90.

The memory circuit 80 includes ferroelectric capacitors 92 and 94 andaccess transistors 96 and 98. A first terminal for each of thecapacitors 92 and 94 is connected to the drive line 82. The drainterminals for each of the MOS transistors 96 and 98 are connectedrespectively to the remaining terminals of the ferroelectric capacitors92 and 94. The word line 84 is connected to the gate terminals of thetransistors 96 and 98. The source terminals of transistors 96 and 98 areconnected respectively to the bit line 86 and the bit bar line 88. Thememory circuit 80 further includes a sense amplifier 97 which has thebit lines 86 and 88 as inputs. The sense amplifier 97 is furtherconnected to the data input/output line 90.

The data 1 and 0 states correspond to the polarization states describedabove for circuit 20 in FIG. 2. In the memory circuit 80, the capacitors92 and 94 are always set to have opposite polarization states. Theoperation of the memory circuit 80 is very similar to that shown forcircuit 20 in FIG. 2. The major difference is that the reference voltageis removed and replaced with a second ferroelectric capacitor memorycell. The sense amplifier functions in the same manner to detect thedifferences between the two bit lines just as detecting the differencebetween one bit line and the reference voltage. The writing andrestoration operations function in the same manner as described above.

A memory system 102 for implementing the dual memory circuit 80 isillustrated in FIG. 9. The common circuit elements from FIG. 8 arereproduced in FIG. 9 with similar reference numerals. The memory system102 receives addresses through an address terminal 104 and theseaddresses are provided to a drive line decoder and driver circuit 106and a word line decoder and driver circuit 108. The address input maycomprise parallel lines. The circuit 106 produces the drive line signalsfor line 82, while the decoder and driver circuit 108 produce the wordline signals for line 84.

A chip enable signal, CE bar, is input through a terminal 110 where itis provided to a sense timing and control circuit 112, as well as to thecircuits 106 and 108.

A read/write signal is input at a terminal 114 where it is provided tothe sense timing and control circuit 112, as well as to a datainput/output and decode circuit 116.

The circuit 112 provides timing and control signals through a line 117to the sense amplifier 97. The decode circuit 116 provides data to andfrom the sense amplifier 97 through the line 90. An input/outputterminal 118 provides data to and from the data input/output and decodecircuit 116.

The memory system 102 further includes an output enable terminal 126which is connected to the sense timing and control circuit 112, as wellas to the data input/output and decode circuit 116.

Operation of the memory system 102 shown in FIG. 9 is now described inreference to FIGS. 10, 11 and 12. Writing of data into the capacitors 92and 94 is described in reference to the memory system 102 shown in FIG.9 and the waveforms in FIG. 10. The first description is for the writingof a data 1 state. An address is received through the terminal 104 andthis address is decoded by the circuit 108 to activate the word line 84.The data 1 state is input through the terminal 118 to the circuit 116which further provides this data state to the sense amplifier 97. Thedrive line 82 is driven to a positive state by the circuit 106. Thesense amplifier 97 applies a high signal to the bit line 86 and a lowlevel signal to the bit line 88. Since the high state on the word line84 has activated the transistors 96 and 98, the ferroelectric capacitor92 initially has a high state on both terminals, but after the driveline pulse goes to a low state, the bit line 86 will be high and thedrive line will be low, thereby applying a negative field to produce thenegative polarization state P(1) on capacitor 92. The ferroelectriccapacitor 94 has a high state on the drive line 82 and a continuous lowstate on the bit bar line 88. This applies a positive field polaritywhich establishes the polarization state P(0) on the capacitor 94. Thus,the capacitors 92 and 94 are set to have opposite polarization states.This combination is arbitrarily defined to be a data 1 state.

The writing of a data 0 is much like that of writing a data 1 with theonly difference being a reversal of the voltage states on the bit line86 and bit bar line 88. As a result of this reversal, the ferroelectriccapacitor 92 is set to a P(0) polarization state, while theferroelectric capacitor 94 is set to a P(1) polarization state. Thiscombination is arbitrarily defined to be a data 0 state. In each of theabove write examples, the word line is turned off after the polarizationorientation is set to thereby isolate the ferroelectric capacitors 92and 94.

Note in FIG. 10 that the word line 84 signal can be turned off, go low,either before or after the signal at the bit lines 86 or 88 goes low.

The reading of a data 1 state for the memory system 102 is illustratedby the waveforms in FIG. 11. In detecting a data state, a senseamplifier must be turned on. The time at which a sense amplifier 97 isactivated is optionally done at the times indicated by lines 128 and130. For the first example, the sense amplifier is activated at the timeindicated by the vertical line 128. In reading the memory system 102,there must again be applied an address through the terminal 104, whichaddress is decoded by the circuit 108 to activate the word line 84. Thisserves to turn on the transistors 96 and 98. This occurs when the signalon line 84 goes to the initial high state. The read command is inputthrough the terminal 114 to the circuit 116 which in turn transmits acommand for activating the circuit 106 to apply a pulse to the driveline 82. This is shown in FIG. 11. For the capacitor 92, thepolarization state is switched from P(1) to P(0) which transfers chargeto the bit line 86. The bit bar line 88 receives little or no net chargeand therefore the voltage on line 88 is approximately zero after thedrive line has returned to a low level. The sense amplifier 97 is turnedon at the time indicated by line 128. This sense amplifier compares thevoltage states on the lines 86 and 88. Whichever line has the greatervoltage will be driven to the full positive voltage level. This is shownfor the line 86 in FIG. 11 immediately following line 128. The remainingline, line 88, is held at the low level voltage state. After the senseamplifier 97 is activated, the data 1 state condition exists for the bitlines 86 and 88, the word line drops to the low level to deactivate thetransistors 96 and 98, thereby isolating the ferroelectric capacitors 92and 94.

It is important to note at this point that the ferroelectric capacitorshave been left in the same polarization state that they were in beforethe read operation occurred. The circuit of the present inventionprovides automatic self-restoration in the same manner as describedabove for the single element memory circuit. There is thus norequirement to have a second write cycle to restore the data state whichwas read from the cell, which is the usual practice when making adestructive read from a memory.

In an optional read method, the sense amplifier is activated at the timeindicated by line 130. The waveform responses for this activation timeare shown by the dashed lines. This sense amplifier activation occursduring the time that the drive line 82 pulse is still high. Reading atthe earlier time in the cycle provides a faster read cycle, but is moresensitive to differences in the two capacitors 92 and 94. There is alsoa different capacitor wear-out mechanism which affects long termreliability.

In the read operation shown in FIG. 11, the word line can be turned offduring either of times identified by lines 127 or 129. At the time shownby line 127 the sense amplifier 97 is still on and the bit lines 86 and88 are differentially charged. If the word line goes off at the time forline 127, a voltage will be left across one of the capacitors 92 or 94.Although this charge will leak off, it could possibly be detrimental tothe ferroelectric material. If this is the case, the word line should beturned off at approximately the time shown by line 129, which is afterthe sense amplifier 97 has been turned off and voltage has been removedfrom both of the capacitors 92 and 94.

The operation for reading a data 0 from the memory system 102 isillustrated by the waveforms in FIG. 12. Like the read operationdescribed above, the address is provided through terminal 104, a chipenable signal through terminal 110 and a read command through terminal114.

In FIG. 12, there are shown two times for activating the senseamplifier, these times are indicated by the lines 132 and 134. In thisread operation, the drive line 82 receives a similar positive drivepulse which is applied to the capacitors 92 and 94. But since thepolarization states of these capacitors are opposite, the bit bar line88 retains a charge, while the bit line 86 returns to a low voltagestate when the drive voltage pulse on line 82 drops. When the senseamplifier 97 is activated, at the time indicated by line 132, the bitbar line 88 is pulled to a high voltage state, while the bit line 86 isheld at the low voltage state. Again, it must be noted that this actionof the sense amplifier 97, in conjunction with the drive line returningto a zero state, serves to restore the initial polarization states tothe ferroelectric capacitors 92 and 94, thereby eliminating the need forany subsequent restore cycle.

As an option, the sense amplifier can be turned on at the time indicatedby the line 134. This produces a faster, more sensitive read cycle. Ineach of the above circuits there is included a sense amplifier fordetecting data states by comparison of a bit line state to a referencevalue or the comparison of the states of two bit lines. Referring toFIG. 13, a circuit 140 includes a sense amplifier 142 for carrying outthese functions. Additional circuitry is included within the circuit 140for accomplishing additional aspects of the memory operations. The senseamplifier 140 includes transistors 144, 146, 148 and 150. These areconnected between a sense amp line 152 and a sense amp bar line 154.These sense amp lines connect to the bit lines shown in FIG. 9 and thebit line and reference line shown in FIG. 4. The sense amplifier 142 iscontrolled through an SN (Sense Negative) line 156 and an SP (SensePositive) line 158.

Transistors 144 and 146 are enhancement mode NMOS devices whiletransistors 148 and 150 are enhancement mode PMOS devices. The drainterminals of transistors 144 and 148 are connected to the sense amp line152 while the source terminals of transistors 146 and 150 are connectedto the sense amp bar line 154. The gate terminals of transistors 144 and148 are connected to the bit bar line 154, while the gate terminals oftransistors 146 and 150 are connected to the sense amp line 152. Thesource terminal of transistor 144 is connected to the drain terminal oftransistor 146, as well as to the SN line 156. The source terminal oftransistor 148 is connected to the drain terminal of transistor 150 andto the SP line 158.

Circuit 140 further includes a data line 164 and a data bar line 166. Acolumn line 168 and a column bar line 170 are connected to transistors172, 174, 176 and 178 to connect or isolate the data lines 164 and 166with the corresponding sense amp lines 152 and 154. The transistors 174and 176 are enhancement NMOS devices. The transistors 172 and 178 areenhancement PMOS devices. Transistors 172 and 174 each have the sourceand drain terminals thereof connected between line 164 and line 152.Transistors 176 and 178 likewise have the source and drain terminalsthereof connected between the data bar line 166 and the bit bar line154. Column line 168 is connected to the gate terminals of transistors174 and 176, while the column bar line 170 is connected to the gateterminals of transistors 172 and 178.

The column and column bar lines 168 and 170 have complementary states.When the column line 168 is high and the column bar line 170 is low, thesense amp lines 152 and 154 are connected to the data lines 164 and 166.But, when the column line 168 is low and the column bar line 170 ishigh, the data lines 164 and 166 are isolated from the sense amp lines152 and 154.

The sense amplifier 142 can be isolated from an internal bit line 184and a bit bar line 186 by the action of isolation transistors 188, 190,192 and 194. The transistors 190 and 192 are enhancement mode NMOSdevices, while the transistors 188 and 194 are enhancement mode PMOSdevices. The circuit 140 further includes an I (Isolation) line 196 andan I bar line 198 which, when activated, provide isolation between thebit lines 184, 186 and the sense amp lines 152, 154 connected to thesense amplifier 142. The I line 196 is connected to the gate terminalsof transistors 190 and 192 and the I bar line 198 is connected to thegate terminals of transistors 188 and 194. The source and drainterminals of transistors 188 and 190 are connected between the lines 152and 184, while the source and drain terminals of transistors 192 and 194are connected between lines 154 and 186. The lines I and I bar havecomplementary states. When the I line is high and the I bar line is low,the lines 152 and 184 are connected together and the lines 154 and 186are connected together. When opposite voltage states are present on thelines 196 and 198, the sense amp lines 152, 154 and the bit lines 184,186 are isolated.

When the circuit 140 is employed as the sense amplifier 97 in FIG. 4,bit lines 184 and 186 are connected respectively to bit lines 86 and 88.Likewise, for FIG. 9, the bit lines 184, 186 are connected respectivelyto the bit lines 86, 88.

The circuit 140 further includes an E (Equalization) line 204. This lineis connected to the gate terminals of enhancement mode MOS transistors206 and 208. Transistor 206 has the drain terminal thereof connected tobit line 184, and transistor 208 has the source terminal thereofconnected to bit line 186. The source terminal of transistor 206 and thedrain terminal of transistor 208 are connected together and to a circuitground. When the E line 204 is activated, the transistors 206 and 208are turned on, thereby connecting the bit lines 184 and 186 together andto ground. This is done prior to any reading of the sense amp lines ofthe memory circuit to equalize the voltage levels on the bit linesbefore any charge is transferred from the ferroelectric capacitors.

Operation of the sense amplifier 142 in the circuit 140 is now describedin reference the circuits shown in FIGS. 9 and 13 and to the waveformsshown in FIGS. 14 and 15. A read operation to read a data 1 isillustrated in FIG. 14. In the initial condition, the chip enable signalgoes low to allow access to the memory system 102. Word line 84 isturned on to activate transistors 96 and 98. The isolation signal I goeshigh to connect the sense amp lines 152 and 154 from the bit lines 184,186. The equalization signal, previously on, at line 204, goes low toseparate the balanced bit lines 184 and 186.

Next, the drive pulse at line 82 goes high, thereby causing chargetransfer from capacitors 92, 94 to lines 152, 154, 184, and 186.Capacitor 92 undergoes a polarization state change and transfers agreater charge to lines 152, 184. Lines 154, 186 receive a lessercharge. When the drive pulse returns to zero, net charge remains onlines 152 and 184.

At the time shown by a line 210, the isolation signal at line 198 isdeactivated to isolate bit lines 184, 186 from the sense amp lines 152,154. The sense amplifier 142 is then activated by the SP and SN signalson lines 150 and 156. As a result, the sense amp line 152 is pulled to afull positive voltage state and sense amp line 154 is held at zero.

Just before the time indicated by vertical line 212, the output enablebar signal at line 126 goes to the active state.

At the time shown by line 212, the isolation I signal at line 196 goeshigh to connect the sense amp lines 152, 154 to the bit lines 184, 186.This pulls bit line 184 high.

Next, the column signal at line 168 is activated during the time period214. This applies the data states on the lines 152, 154 to the datalines 164, 166. The output enable signal at line 126 goes to the disablestate during period 214. Also the isolation signal at line 196 goes lowwhich allows the bit line 184 to go low due to activation of theequalization signal at line 204.

Next, the chip enable signal at line 110 goes to the high, disabled,state.

At the start of a time period 216, the word line signal at line 84 goeslow to turn off transistors 96 and 98 and thereby isolate the capacitors92 and 94, which have both been maintained at their originalpolarization states.

Next the SP and SN signals at lines 150 and 156 return to the initialstates to deactivate the sense amplifier 142. This causes the sense ampline 152 to go to the ground state together with line 154. Thiscompletes the read cycle.

The use of the sense amplifier 142 and the writing of data states isindicated by the waveforms shown in FIG. 15. For this example, a data 1state is written into the memory system, such as the system 102. Theequalization line 204 connects the bit lines 184 and 186 to equalize thecharge at a ground level. In the next step, the column line 168transitions to the high voltage state to activate the column transistors172, 174, 176 and 178 which connect the data lines 164 and 166 to thesense amp lines 152 and 154. During this part of the cycle, the I line196 is activated to connect the bit line 184 to the sense amp line 152and the bit line 186 to the sense line 154. The sense amplifier 142 isactivated when the transitions occur for the SP line 158 and the SN line156. The data signal on lines 164 and 166 serve to set the state of thesense amplifier 142. Sense amplifier 142 is turned on at the timeindicated by a line 218. Thus, the appropriate data states areestablished on the sense amp lines 184 and 186. At the beginning of aninterval 220, the drive line 82 transitions from the low state to thehigh voltage state. Referring back to FIG. 9, this action serves to setthe state in the ferroelectric capacitor 94. When the drive line pulsedrops from the high to the low state, a polarity differential isdeveloped across the ferroelectric capacitor 92, which is the oppositefrom that applied to the capacitor 94. Therefore, complementarypolarization states are set in the ferroelectric capacitors 92 and 94.This occurs during a time period 220. The sense amplifier 142 is turnedoff during a time period 222 after the data states have been set in theferroelectric capacitors 92 and 94. The word line 114 signal isdeactivated prior to the turning off of the sense amplifier 142 toisolate the ferroelectric capacitors.

Finally, the equalization signal at E line 204 returns to a high stateto balance and discharge the bit lines 184 and 186.

Referring now to FIG. 16, there is shown a group of waveformsillustrating a memory operation process which is termedread/modify/write. This is a process for providing a very fast read froma memory, modification of the results by operation of software, followedby writing the modified results back into the memory. All of this isaccomplished in a single cycle which is shorter than the sum of both aread cycle and a write cycle.

Further referring to FIG. 16, there are three sequential time periodswhich are labeled as READ, MODIFY and WRITE. The read portion isbasically the same as that shown in FIG. 14 for reading a logic state,while the write portion is basically the same as that shown in FIG. 15for writing a logic state.

The equalization signal at line 204 is maintained high before the cyclestarts to equalize the bit lines 184 and 186.

The read/modify/write cycle is initiated by the chip enable signal atline 110 going to a low, active state. Following this transition, thesignal at word line 84 goes to a high state to activate the transistors96 and 98. The isolation signal at line 196 is next activated to connectthe bit lines 184, 186 with sense amp lines 152, 154.

Next, the drive line 82 is supplied with a positive pulse which appliesa bias to the ferroelectric capacitors 92 and 94. The amount of chargetransferred to the bit lines 184 and 186 is dependent upon the previouspolarization orientations of the capacitors 92 and 94, as describedabove. Following the drive line pulse, the isolation signal at line 196returns to a low state to isolate the bit lines 184 and 186 from thesense amp lines 152 and 154. At this time, the sense amplifier 142 isactivated by state transitions of the SP and SN lines 156 and 158.Activation of sense amplifier 142 causes the sense amp lines 152 and 154to be driven to either a high or a low voltage state depending upon thecharge received from the ferroelectric capacitors 92 and 94. In thepresent example, the sense amp line 152 is driven to a low state, whilethe sense amp line 154 goes to a high state. This is the reading of alogic 0 from the memory system 102.

Following activation of the sense amplifier 142, the isolation signal atline 196 is again activated to connect the bit lines 184 and 186 to thesense lines 152 and 154. As a result, the bit lines 184 and 186 aredriven to or held at the states of the corresponding lines 152 and 154.After activation of the isolation signal at line 196, and still duringthe read portion of the waveform, the column signal at line 168 isactivated to connect the sense lines 152 and 154 with the data lines 164and 166. This serves to transfer the data state read from the memorysystem 102 to the output data lines 164 and 166.

At this point, there is a transition in the waveforms to the modifyportion of the cycle. During this time, the memory has its addresscircuitry activated by a microprocessor with no address change. Thememory is awaiting the start of the write cycle of the read, modify,write sequence. No new address is provided to the memory system 102.

Immediately following the modify portion of the cycle, the write enablesignal at line 114 transfers from the read state to the write state.Thereafter, the equalization signal, which was previously in the onstate, is deactivated to decouple the bit lines 184 and 186. Next, thecolumn line goes to the active state to couple the bit lines 152 and 154to the data lines 164 and 166. This serves to transfer the data state tobe written into the memory system 102 from the output data lines to theterminals of the sense amplifier 142. For the present example, this isthe inverse of the state read from memory, that is, a logic 1 state.

Next, the data lines 164 and 166 go through a state transition.

The write enable signal next transitions from the write enable state tothe write disable state. Shortly thereafter, the isolation signal atline 196 goes to the high state to couple the bit lines 184 and 186 tothe sense amplifier lines 152 and 154. The column signal at line 168then transfers to the low state to decouple the data lines 164 and 166from the sense amplifier bit lines 152 and 154, but this step isoptional.

Next, the drive line is pulsed to provide the appropriate differentialacross the ferroelectric capacitors 92 and 94. The logic state on thebit line 184 is maintained for a sufficient time period to apply theappropriate voltage differential across the ferroelectric capacitors 92and 94. This is similar to the write operation described above.

The equalization signal at line 204 is next activated to couple bitlines 184 and 186, after the isolation signal at line 196 is deactivatedto decouple bit lines 184 and 186 from the sense amplifier lines 152 and154. In the final steps, the chip enable signal returns to the disablestate, the word line returns to a low state, thereby deactivating theaccess transistors 96 and 98 and the sense amplifier control signals .atlines 156 and 158 return to the inactive state.

The above description in reference to FIG. 16 can provide aread/modify/write cycle in a shorter time than separate cycles becausethe address provided to the memory system 102 does not have to bechanged, but is maintained throughout the entire cycle.

In summary, the present invention comprises a circuit for writing to andreading from non-volatile memory cells using ferroelectric capacitors.

Although several embodiments of the invention have been illustrated inthe accompanying Drawings and described in the foregoing DetailedDescription, it will be understood that the invention is not limited tothe embodiments disclosed, but is capable of numerous rearrangements,modifications and substitutions without departing from the scope of theinvention.

1. A non-volatile memory circuit, comprising: a plurality of memorycells, each memory cell comprising a ferroelectric capacitor connectedin series with an access transistor, said plurality of memory cellsbeing connected between a plurality of respective drive lines and acommon bit line; a plurality of word lines connected respectively tocontrol terminals of said access transistors for activating respectiveones of said access transistors in response to a selection signal forselecting one of said memory cells; and a differential sense amplifierfor reading from and writing to said memory cells, said sense amplifierhaving a first input connected to said bit line, and a second inputconnected to receive a reference signal, said sense amplifier having adata input terminal and a data output terminal, said sense amplifier fordifferentially comparing signals on said first and second input linesfor reading a data state from a selected one of said memory cells, andfor applying a data state read from said selected memory cell to saiddata output terminal, and said sense amplifier for driving said bit lineconnected to said selected memory cell to one of a set of predeterminedvoltage states corresponding to a data state received at said data inputterminal for writing said received data state into the selected one ofsaid memory cells.
 2. A non-volatile memory circuit as recited in claim1 wherein said reference signal is a predetermined voltage.
 3. Anon-volatile memory circuit as recited in claim 1 including multiplesets of said memory cells, each set having a respective common bit linethereby forming a memory circuit matrix comprising rows and columns ofsaid memory cells.
 4. A non-volatile memory circuit as recited in claim1 including means for isolating said sense amplifier from said bit line.5. A non-volatile memory circuit, comprising: a plurality of memorycells each including a ferroelectric capacitor connected in series withan access transistor, said plurality of memory cells being connectedbetween a plurality of respective bit lines and a common drive line, aword line connected to control terminals of said access transistors foractivating said transistors in response to a selection signal forselecting one of said memory cells, and a plurality of differentialsense amplifiers corresponding respectively to said bit lines forreading from and writing to memory cells associated with the bit lines,each sense amplifier having a first input connected to the correspondingbit line and a second input connected to receive a reference signal,each sense amplifier having a data input/output terminal, said senseamplifiers for differentially comparing signals on said first and secondinputs thereof for reading a data state from the one of said memorycells connected thereto, and for applying a data state read from saidselected memory cell to said output terminal, and said sense amplifiersfor driving the corresponding bit lines connected to said memory cellsto predetermined voltage states corresponding to a data state receivedat said input terminal for writing said received data state into thecorresponding one of said memory cells.
 6. A non-volatile memory circuitas recited in claim 5 wherein said reference signal is a predeterminedvoltage.
 7. A non-volatile memory circuit as recited in claim 5including multiple sets of said memory cells, each set having arespective common drive line thereby forming a memory circuit matrixcomprising rows and columns of said memory cells.
 8. A non-volatilememory circuit as recited in claim 5 including respective means forisolating said sense amplifier from the corresponding bit lines.
 9. In anonvolatile ferroelectric memory of the type having a plurality memorycells, a bit line coupled to each said memory cell, each said memorycell comprising a ferroelectric capacitor having first and second plateelectrodes, the polarization of said capacitors corresponding to thedata stored therewithin, the improvement wherein: said memory furthercomprising a plurality of word lines and a plurality of plate linesdistinct from said bit lines and word lines, each of the memory cellsbeing coupled to a word line, each memory cell being coupled also to aplate line, each plate line being coupled to a capacitor plate electrodeof a cell, and each said memory cell further including a respectiveswitching device located within the memory cell, said first plateelectrode of said capacitor in said cell being coupled to one said bitline via said switching device, said switching device being coupled tobe controlled by one said word line, said second plate electrode of saidcapacitor in said cell being coupled to one said plate line.
 10. In anonvolatile ferroelectric memory of the type having a plurality ofmemory cells arranged in rows and columns, each column comprising a bitline coupled to memory cells along the column, each said memory cellcomprising a ferroelectric capacitor having first and second plateelectrodes, the polarization of said capacitors corresponding to thedata stored therewithin, the improvement wherein: said memory furthercomprises a plurality of word lines and a plurality of plate liensdistinct from said bit lines and word lines, each of the memory cellsalong a row being coupled to a word line corresponding to the row, eachmemory cell being coupled also to a corresponding plate line, each plateline being coupled to plate electrodes in a plurality of said cells.each said memory cell further including a respective switching devicelocated within the memory cell, said first plate electrode of saidcapacitor in said cell being coupled to its corresponding bit line viasaid switching device, said switching device being coupled to becontrolled by said corresponding word line, said second plate electrodeof said capacitor in said cell being coupled to said corresponding plateline.
 11. A non-volatile ferroelectric memory comprising as array ofmemory cells arranged in rows and columns, each said row correspondingto a respective word line, each said column corresponding to arespective bit line, a respective sense amplifier coupled to each saidbit line; each memory cell comprising a ferroelectric capacitor havingfirst and second plate electrodes and a transistor located within saidcell for coupling said first electrode of said ferroelectric capacitorto the corresponding said bit line; said word line being coupled to acontrol electrode of said transistor; and a plate line coupled to thesecond plate electrode of said ferroelectric capacitor, said plate linebeing coupled to second plate electrodes of a plurality of capacitors insaid array, said plate line being distinct from said word lines and saidbit lines.